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 MMBV3102LT1
Preferred Device
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods.
Features
* High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio * Pb-Free Package is Available
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 30 200 225 1.8 +125 -55 to +150 Unit Vdc mAdc mW mW/C C C
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3 Cathode
1 Anode
3 1 2
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
SOT-23 (TO-236) CASE 318 STYLE 8
MARKING DIAGRAM
M4CM G G 1
M4C = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device MMBV3102LT1 MMBV3102LT1G Package SOT-23 Shipping 3,000 / Tape & Reel
SOT-23 3,000 / Tape & Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2006
1
January, 2006 - Rev. 3
Publication Order Number: MMBV3102LT1/D
MMBV3102LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 30 - - Typ - - 300 Max - 0.1 - Unit Vdc mAdc ppm/C
Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV3102LT1 Min 20 Nom 22 Max 25
Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min 200
CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min 4.5 Typ 4.8
TYPICAL CHARACTERISTICS
40 Q, FIGURE OF MERIT (x 1000) 36 CT , DIODE CAPACITANCE (pF) 32 28 24 20 16 12 8.0 4.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 f = 1.0 MHz TA = 25C 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 TA = 25C f = 50 MHz
0
3.0
6.0
9.0
12
15
18
21
24
27
30
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
C T, DIODE CAPACITANCE (NORMALIZED)
100 I R , REVERSE CURRENT (nA)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
10 VR = 20 Vdc 1.0
0.1
0.01
0.001 -60
-20
0
+20
+60
+100
+140
TA, AMBIENT TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
Figure 3. Leakage Current
Figure 4. Diode Capacitance
NOTES ON TESTING AND SPECIFICATIONS
1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc.
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2
MMBV3102LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
3 SEE VIEW C
E
1 2
HE c b e q 0.25
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
A L A1 L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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3
MMBV3102LT1/D


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